ON1114 Datasheet PDF - Panasonic Semiconductor
| Part Number | ON1114 | |
| Description | Photo lnterrupter | |
| Manufacturers | Panasonic Semiconductor | |
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Transmissive Photosensors (Photo lnterrupters)
CNA1012K (ON1114)
Photo lnterrupter
For contactless SW, object detection
Unit: mm
■ Overview
CNA1012K is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element, and
a high sensitivity phototransistor is used as the light detecting ele-
ment. The two elements are arranged so as to face each other, and
objects passing between them are detected.
■ Features
• Highly precise position detection: 0.3 mm
• Wide gap between emitting and detecting elements, suitable for
www.DataSheetth4iUck.cpolmate detection
• Fast response: tr , tf = 6 µs (typ.)
• Small output current variation against change in temperature
• Large output current
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Input (Light Reverse voltage
emitting diode) Forward current
Power dissipation *1
Output (Photo Collector-emitter voltage
transistor) (Base open)
VR
IF
PD
VCEO
3
50
75
30
Unit
V
mA
mW
V
0.45±0.1
Mark for indicating
LED side
13.0±0.3
5.0±0.2
A
0.45±0.1
2-R0.5
A'
(10.0)
2-0.45±0.2
(2.54)
Device
center
SEC. A-A'
23
1: Anode
14
2: Cathode
3: Collector
4: Emitter
PISTR104-013 Package
(Note) ( ) Dimension is reference
Emitter-collector voltage VECO
(Base open)
5
V
Collector current
IC 20 mA
Collector power dissipation *2 PC
100 mW
Temperature Operating ambient temperature Topr −25 to +85 °C
Storage temperature
Tstg −30 to +100 °C
Note) *1: Input power derating ratio is 1.0 mW/°C at
Ta ≥ 25°C.
*2: Output power derating ratio is 1.34 mW/°C
at Ta ≥ 25°C.
■ Electrical-Optical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Input Forward voltage
characteristics Reverse current
Output Collector-emitter cutoff current
characteristics (Base open)
VF
IR
ICEO
IF = 50 mA
VR = 3 V
VCE = 10 V
1.2 1.5 V
10 µA
200 nA
Collector-emitter capacitance CC
Transfer Collector current
IC
characteristics Collector-emitter saturation voltage VCE(sat)
Rise time *
tr
Fall time *
tf
VCE = 10 V, f = 1 MHz
VCE = 10 V, IF = 20 mA
IF = 50 mA, IC = 0.1 mA
VCC = 10 V, IC = 1 mA
RL = 100 Ω
5 pF
0.7 mA
0.3 V
6 µs
6 µs
Note) 1. Input and output are practiced by electricity.
2. This device is designed be disregarded radiation.
3. *: Switching time measurement circuit
Sig. in
50Ω
VCC
Sig. out
RL
(Input pulse)
(Output pulse)
tr : Rise time
90% tf : Fall time
10%
tr tf
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00019BED
1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ON1114 electronic component. |
| Information | Total 3 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ ON1114.PDF Datasheet ] | |
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