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9NQ20T Datasheet دیتاشیت PDF دانلود

دیتاشیت - NXP Semiconductors - PHF9NQ20T

شماره قطعه 9NQ20T
شرح مفصل PHF9NQ20T
تولید کننده NXP Semiconductors 
آرم NXP Semiconductors 


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9NQ20T شرح
Philips Semiconductors
N-channel TrenchMOStransistor
Product specification
PHX9NQ20T , PHF9NQ20T
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
d
g
VDSS = 200 V
ID = 5.2 A
RDS(ON) 400 m
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GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package
PINNING
SOT186A (FPAK)
SOT186 (FPAK)
PIN DESCRIPTION
1 gate
case
case
2 drain
3 source
case isolated
12 3
12 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Ths = 25 ˚C; VGS = 10 V
Ths = 100 ˚C; VGS = 10 V
Ths = 25 ˚C
Ths = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
5.2
3.3
21
25
150
UNIT
V
V
V
A
A
A
W
˚C
November 2000
1
Rev 1.100

قانون اساسیصفحه 9
دانلود [ 9NQ20T دیتاشیت ]



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