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P45N03LTG fiches techniques PDF

Niko - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Numéro de référence P45N03LTG
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Fabricant Niko 
Logo Niko 





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P45N03LTG fiche technique
NIKO-SEM
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
P45N03LTG
TO-220
Lead Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
25 20m
ID
45A
D
G
www.DataSheet4U.com
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
Lead Temperature (1/16” from case for 10 sec.)
VGS
ID
IDM
IAR
EAS
EAR
PD
Tj, Tstg
TL
1. GATE
2. DRAIN
3. SOURCE
LIMITS
±20
45
28
140
20
140
5.6
65
33
-55 to 150
275
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Junction-to-Ambient
RθJA
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature.
2Duty cycle 1
TYPICAL
0.7
MAXIMUM
3
70
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125 °C
LIMITS
UNIT
MIN TYP MAX
25
0.8 1.2
2.5
V
±250 nA
25
µA
250
1 AUG-13-2004

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