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Infineon Technologies - IKW50N60T

Numéro de référence K50T60T
Description IKW50N60T
Fabricant Infineon Technologies 
Logo Infineon Technologies 





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K50T60T fiche technique
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TrenchStop Series
IKW50N60T
q
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel EmCon HE diode
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
G
P-TO-247-3-1
(TO-220AC)
C
E
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
IKW50N60T 600V 50A
1.5V
175°C
K50T60
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 600V, Tj 175°C)
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150°C
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
-
Package Ordering Code
TO-247 Q67040S4718
Value
600
801)
50
150
150
100
50
150
±20
5
333
-40...+175
-55...+175
260
Unit
V
A
V
µs
W
°C
1) Value limited by bond wire
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.1 Dec-04

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