|
|
PDF AT49BV640DT Data sheet ( Hoja de datos )
| Número de pieza | AT49BV640DT | |
| Descripción | 64-megabit (4M x 16) 3-volt Only Flash Memory | |
| Fabricantes | ATMEL Corporation | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de AT49BV640DT (archivo pdf) en la parte inferior de esta página. Total 30 Páginas | ||
|
No Preview Available !
Features
• Sinwgwlew.VDoalttaaSgheeeOt4pUe.rcaotmion Read/Write: 2.65V - 3.6V
• Access Time – 70 ns
• Sector Erase Architecture
– One Hundred Twenty-seven 32K Word (64K Bytes) Main Sectors with
Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
• Fast Word Program Time – 10 µs
• Typical Sector Erase Time: 32K Word Sectors – 700 ms; 4K Word Sectors – 100 ms
• Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming Data from Any Sector by Suspending
Erase of a Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation
– 10 mA Active
– 15 µA Standby
• VPP Pin for Write Protection and Accelerated Program Operation
• WP Pin for Sector Protection
• RESET Input for Device Initialization
• Flexible Sector Protection
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Minimum 100,000 Erase Cycles
• Common Flash Interface (CFI)
• Green (Pb/Halide-free/RoHS Compliant) Packaging
64-megabit
(4M x 16)
3-volt Only
Flash Memory
AT49BV640D
AT49BV640DT
1. Description
The AT49BV640D(T) is a 2.7-volt 64-megabit Flash memory organized as 4,194,304
words of 16 bits each. The memory is divided into 135 sectors for erase operations.
The device is offered in a 48-ball CBGA package. The device has CE and OE control
signals to avoid any bus contention. This device can be read or reprogrammed using
a single power supply, making it ideally suited for in-system programming.
The device powers on in the read mode. Command sequences are used to place
the device in other operation modes such as program and erase. The device has
the capability to protect the data in any sector (see “Flexible Sector Protection” on
page 6).
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory.
The VPP pin provides data protection. When the VPP input is below 0.4V, the program
and erase functions are inhibited. When VPP is at 1.65V or above, normal program
and erase operations can be performed. With VPP at 10.0V, the program (Dual-word
Program command) operation is accelerated.
3608C–FLASH–11/06
1 page  
AT49BV640D(T)
4.7 Read Status Register
www.DataSheet4U.com The status register indicates the status of device operations and the success/failure of that
operation. The Read Status Register command causes subsequent reads to output data from
the status register until another command is issued. To return to reading from the memory,
issue a Read command.
The status register bits are output on I/O7 - I/O0. The upper byte, I/O15 - I/O8, outputs 00H
when a Read Status Register command is issued.
The contents of the status register [SR7:SR0] are latched on the falling edge of OE or CE
(whichever occurs last), which prevents possible bus errors that might occur if status register
contents change while being read. CE or OE must be toggled with each subsequent status
read, or the status register will not indicate completion of a Program or Erase operation.
When the Write State Machine (WSM) is active, SR7 will indicate the status of the WSM; the
remaining bits in the status register indicate whether the WSM was successful in performing
the preferred operation (see Table 4-1).
Table 4-1. Status Register Bit Definition
WSMS
ESS
ES
PRS
VPPS
PSS
SLS
R
76543210
Notes
SR7 WRITE STATE MACHINE STATUS (WSMS)
1 = Ready
0 = Busy
Check Write State Machine bit first to determine Word Program
or Sector Erase completion, before checking program or erase
status bits.
SR6 = ERASE SUSPEND STATUS (ESS)
1 = Erase Suspended
0 = Erase In Progress/Completed
When Erase Suspend is issued, WSM halts execution and sets
both WSMS and ESS bits to “1” – ESS bit remains set to “1” until
an Erase Resume command is issued.
SR5 = ERASE STATUS (ES)
1 = Error in Sector Erase
0 = Successful Sector Erase
When this bit is set to “1”, WSM has applied the max number of
erase pulses to the sector and is still unable to verify successful
sector erasure.
SR4 = PROGRAM STATUS (PRS)
1 = Error in Programming
0 = Successful Programming
When this bit is set to “1”, WSM has attempted but failed to
program a word
SR3 = VPP STATUS (VPPS)
1 = VPP Low Detect, Operation Abort
0 = VPP OK
The VPP status bit does not provide continuous indication of VPP
level. The WSM interrogates VPP level only after the Program or
Erase command sequences have been entered and informs the
system if VPP has not been switched on. The VPP is also checked
before the operation is verified by the WSM.
SR2 = PROGRAM SUSPEND STATUS (PSS)
1 = Program Suspended
0 = Program in Progress/Completed
When Program Suspend is issued, WSM halts execution and
sets both WSMS and PSS bits to “1”. PSS bit remains set to “1”
until a Program Resume command is issued.
SR1 = SECTOR LOCK STATUS (SLS)
1 = Prog/Erase attempted on a locked sector; Operation aborted.
0 = No operation to locked sectors
If a Program or Erase operation is attempted to one of the locked
sectors, this bit is set by the WSM. The operation specified is
aborted and the device is returned to read status mode.
SR0 = Reserved for Future Enhancements (R)
This bit is reserved for future use and should be masked out
when polling the status register.
Note: 1. A Command Sequence Error is indicated when SR1, SR3, SR4 and SR5 are set.
3608C–FLASH–11/06
5
5 Page 
4.22 Program Suspend/Resume Flowchart
www.DataSheet4U.com
Start
Write B0
Any Address
(Program Suspend)
Write 70
Any Address
(Read Status)
Read Status
Register
SR7 =
1
SR2 =
1
Write FF
0
0 Program
Completed
(Read Array)
Read
Data
Write FF
(Read
Array)
Done
Reading
No
Read
Data
Ye s
Write D0
Any Address
(Program Resume)
Program
Resumed
AT49BV640D(T)
4.23 Program Suspend/Resume Procedure
Bus
Operation Command Comments
Write
Program
Suspend
Data = B0
Addr = Any address
Write
Read
Status
Data = 70
Addr = Any address
Read
None
Status register data: Toggle CE
or
OE to update status register
Addr = Any address
Check SR7
Idle
None
1 = WSM Ready
0 = WSM Busy
Check SR2
Idle
None
1 = Program suspended
0 = Program completed
Write
Data = FF
Read Array
Addr = Any address
Read
None
Read data from any word in the
memory
Write
Program
Resume
Data = D0
Addr = Any address
3608C–FLASH–11/06
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet AT49BV640DT.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| AT49BV640D | 64-megabit (4M x 16) 3-volt Only Flash Memory | ATMEL Corporation |
| AT49BV640DT | 64-megabit (4M x 16) 3-volt Only Flash Memory | ATMEL Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |