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2SC3110 fiches techniques PDF

Inchange - Silicon Power Transistor

Numéro de référence 2SC3110
Description Silicon Power Transistor
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2SC3110 fiche technique
INCHANGE Semiconductor
iscwww.DaStaSilhieceto4Un.coNm PN RF Transistor
isc RF Product Specification
2SC3110
DESCRIPTION
·Low Noise
·High Gain
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in RF wide band low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
15 V
VCEO Collector-Emitter Voltage
12 V
VEBO Emitter-Base Voltage
2.5 V
IC Collector Current-Continuous
30 mA
ICP Collector Current-Peak
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
50 mA
0.2 W
150
-55~150
isc Websitewww.iscsemi.cn

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