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Numéro de référence | 2SC3110 | ||
Description | Silicon Power Transistor | ||
Fabricant | Inchange | ||
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1 Page
INCHANGE Semiconductor
iscwww.DaStaSilhieceto4Un.coNm PN RF Transistor
isc RF Product Specification
2SC3110
DESCRIPTION
·Low Noise
·High Gain
·High Current-Gain Bandwidth Product
APPLICATIONS
·Designed for use in RF wide band low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
15 V
VCEO Collector-Emitter Voltage
12 V
VEBO Emitter-Base Voltage
2.5 V
IC Collector Current-Continuous
30 mA
ICP Collector Current-Peak
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
50 mA
0.2 W
150 ℃
-55~150
℃
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SC3110 ] |
No | Description détaillée | Fabricant |
2SC3110 | Silicon Power Transistor | Inchange |
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2SC3114 | High-VEBO/AF Amp Applications | Sanyo Semicon Device |
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TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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