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PDF GE5N20V Data sheet ( Hoja de datos )
| Número de pieza | GE5N20V | |
| Descripción | N-Channel MOS Field Effect Transistor | |
| Fabricantes | Gemos | |
| Logotipo |  |
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GEMOS
www.DataSheet4U.com
MOS FIELD EFFECT TRANSISTOR
GE5N20V
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The GE5N20V uses advanced trench technology to provide
excellent RDS(ON), rugged avalanche characteristics and less
critical alignment steps therefore a remarkable manufacturing
reproducibility. This device is suitable for use as a Battery
protection or in other Switching application.
Schematic diagram
GENERAL FEATURES
● VDS = 20V,ID = 5A
RDS(ON) < 36mΩ @ VGS=2.7V
RDS(ON) < 27.5mΩ @ VGS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Marking and pin Assignment
APPLICATIONS
● Battery protection
● Load switch
● Power management
TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Reel Size
5N20V
GE5N20V
TSSOP-8
Ø330mm
Tape width
12mm
ABSOLUTE MAXIMUM RATLNGS(TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ，TSTG
Limit
20
±12
5
20
1.5
-55 to 150
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient
(Note 2)
RθJA
83
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(Note 3)
VGS(th)
Drain-Source On-State Resistance RDS(ON)
Forward Transconductance
gFS
Condition
VGS=0V,ID=250µA
VDS=18V,VGS=0V
VGS=±12V,VDS=0V
VDS=VGS,,ID=250µA
VGS=4.5V, ID=2.5A
VGS=2.7V, ID=2.5A
VDS=15V, ID=2.5A
Min
20
0.6
Typ
21
26
9.5
Max
1
±100
27.5
36
Quantity
3000 units
Unit
V
V
A
A
W
℃
℃/W
Unit
V
µA
nA
V
mΩ
mΩ
S
捷拓科技有限公司
地 址：廣東省深圳市福田區南園路 68 号上步大廈 18 樓 I-L 室
電 話：0755-83661391
郵政編碼：518031
傳 真：0755-83661909
公司網站：www.gemostech.com
GEMOS(SHEN ZHEN) TECHNOLOGY LIMITED COMPANY
ADD:Room I-L,18F,Shangbu Bldg.,NO.68 Nanyuan Road, Futian District,Shenzhen China.
Tel:0755-83661391
Fax:0755-83661909
Postcode:518031
Website:www.gemostech.com
© GEMOS TECH CO., LTD. 2007
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| PDF Descargar | [ Datasheet GE5N20V.PDF ] | |
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