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9915H Datasheet دیتاشیت PDF دانلود

دیتاشیت - Advanced Power Electronics - AP9915H

شماره قطعه 9915H
شرح مفصل AP9915H
تولید کننده Advanced Power Electronics 
آرم Advanced Power Electronics 


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9915H شرح
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Advanced Power
Electronics Corp.
AP9915H/J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Single Drive Requirement
Description
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
20V
50mΩ
20A
GD S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=125
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
GD
S
TO-251(J)
Rating
20
± 12
20
16
41
26
0.2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
4.8
110
Unit
/W
/W
Data and specifications subject to change without notice
200218032

قانون اساسیصفحه 6
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