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PDF IXBH15N140 Data sheet ( Hoja de datos )
| Número de pieza | IXBH15N140 | |
| Descripción | (IXBH15N140 / IXBH15N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor | |
| Fabricantes | IXYS Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IXBH15N140 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Hwwiwg.DahtaSVheoet4lUta.cogme BIMOSFETTM
Monolithic Bipolar
MOS Transistor
N-Channel, Enhancement Mode
IXBH 15N140
IXBH 15N160
VCES = 1400/1600 V
IC25 = 15 A
VCE(sat) = 5.8 V typ.
tfi = 40 ns
C TO-247 AD
GG
C
E
C (TAB)
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol
VCES
VCGR
VGES
VGEM
IC25
I
C90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
M
d
Weight
Conditions
Maximum Ratings
15N140 15N160
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
1400
1400
1600
1600
±20
±30
V
V
V
V
TC = 25°C,
T
C
= 90°C
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 47 W VCE = 0.8•VCES
Clamped inductive load, L = 100 mH
15
9
18
ICM = 18
A
A
A
A
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
150
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
Mounting torque
1.15/10 Nm/lb.in.
6g
Features
• International standard package
JEDEC TO-247 AD
• High Voltage BIMOSFETTM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective RDS(on)
• Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
• MOS Gate turn-on
- drive simplicity
• Reverse conducting capability
Applications
• Flyback converters
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• CRT deflection
• Lamp ballasts
Symbol
BVCES
VGE(th)
ICES
IGES
V
CE(sat)
Conditions
IC = 1 mA, VGE = 0 V
IC = 1 mA, VCE = VGE
VCE = 0.8 • VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
I = I , V = 15 V
C C90 GE
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
15N140
15N160
1400
1600
4
V
V
8V
TJ = 25°C
TJ = 125°C
100 mA
0.1 mA
± 500 nA
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Space savings
• High power density
TJ = 125°C
5.8 7.0 V
7.7 V
© 2000 IXYS All rights reserved
1-4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXBH15N140.PDF ] | |
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