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Numéro de référence | M02N60 | ||
Description | N Channel MOSFET | ||
Fabricant | Stanson Technology | ||
Logo | |||
1 Page
N Chwawnw.nDaetlaShMeetO4US.cFomET
2.0A
M02N60
PIN CONFIGURATION
TO-251
TO-252
1.Gate 2.Drain 3.Source
ABSOLUTE MAXIMUM RATINGS
FEATURE
Robust High Voltage Temination.
Avalanche Energy Specified
Source-to Drain Diode Recovery Time
Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge
Circurits
IDSS and VDS(on) Specified at Elevated
Temperature
RATING
SYMBOL VALUE UNIT
Drain to Current - Continuous
- Pulsed
ID 2.0 A
IDM 9.0
Gate-to-Source Voltage – Continue
- Non-repetitive
VGS
VGSM
+/-20
+/-40
V
V
Total Power Dissipation
TO-251/252
TO-220
Operating and Storage Temperature Range
PD
TJ, TSTG
60
60
-55 to 150
W
Single Pulse Drain-to-Source Avalanche Energy – Tj = 25
(VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25
Thermal Resistance – Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds
EAS
JA
TL
20 mJ
1.0 /W
62.5
260
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
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Pages | Pages 5 | ||
Télécharger | [ M02N60 ] |
No | Description détaillée | Fabricant |
M02N60 | N Channel MOSFET | Stanson Technology |
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