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IB6N60A fiches techniques PDF

International Rectifier - IRFIB6N60A

Numéro de référence IB6N60A
Description IRFIB6N60A
Fabricant International Rectifier 
Logo International Rectifier 





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IB6N60A fiche technique
www.DataSheet4U.com
PD - 91813
SMPS MOSFET IRFIB6N60A
Applications
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
l High Voltage Isolation = 2.5KVRMS†
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
HEXFET® Power MOSFET
VDSS
600V
Rds(on) max ID
0.75W
5.5A
G DS
TO-220 FULLPAK
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
5.5
3.5
37
60
0.48
± 30
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l Single Transistor Forward
l Active Clamped Forward
Notes  through †are on page 8
www.irf.com
1
01/12/99

PagesPages 8
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