Datasheet IFN6450-PDF.HTML Equivalent ( PDF )

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Número de pieza

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Fabricantes

IFN Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	IFN112	N-Channel Silicon Junction Field-Effect Transistor D-4 IFN112 N-Channel Silicon Junction Field-Effect Transistor 01/99 ¥ Low-Noise, High Gain ¥ Equivalent to Japanese 2SK112 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating S	InterFET Corporation	transistor
2	IFN146	Dual N-Channel Silicon Junction Field-Effect Transistor 01/99 D-5 IFN146 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK146 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power	InterFET Corporation	transistor
3	IFN147	N-Channel Silicon Junction Field-Effect Transistor D-6 01/99 IFN147 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise Audio Amplifier ¥ Equivalent to Japanese 2SK147 Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dis	InterFET Corporation	transistor
4	IFN424	Dual N-Channel Silicon Junction Field-Effect Transistor B-42 01/99 IFN424, IFN425, IFN426 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Very High Impedance Differential Amplifiers ¥ Electrometers Absolute maximum ratings at TA = 25¡C Device Dissapation (Derate 3.2 mW/°C to 50°C) Total Device Dissipation (Derate 6 m	InterFET Corporation	transistor
5	IFN425	Dual N-Channel Silicon Junction Field-Effect Transistor B-42 01/99 IFN424, IFN425, IFN426 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Very High Impedance Differential Amplifiers ¥ Electrometers Absolute maximum ratings at TA = 25¡C Device Dissapation (Derate 3.2 mW/°C to 50°C) Total Device Dissipation (Derate 6 m	InterFET Corporation	transistor
6	IFN426	Dual N-Channel Silicon Junction Field-Effect Transistor B-42 01/99 IFN424, IFN425, IFN426 Dual N-Channel Silicon Junction Field-Effect Transistor ¥ Very High Impedance Differential Amplifiers ¥ Electrometers Absolute maximum ratings at TA = 25¡C Device Dissapation (Derate 3.2 mW/°C to 50°C) Total Device Dissipation (Derate 6 m	InterFET Corporation	transistor
7	IFN6449	(IFN6449 / IFN6450) N-Channel Silicon Junction Field-Effect Transistor B-48 01/99 IFN6449, IFN6450 N-Channel Silicon Junction Field-Effect Transistor ¥ High Voltage Absolute maximum ratings at TA = 25¡C Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating IFN6	InterFET Corporation	transistor

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