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PDF SPI73N03S2L-08 Data sheet ( Hoja de datos )
| Número de pieza | SPI73N03S2L-08 | |
| Descripción | OptiMOS Power-Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SPI73N03S2L-08 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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OptiMOS® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x RDS(on)
product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
P- TO262 -3-1
SPI73N03S2L-08
SPP73N03S2L-08,SPB73N03S2L-08
Product Summary
VDS
RDS(on)
ID
30 V
8.4 mΩ
73 A
P- TO263 -3-2
P- TO220 -3-1
Type
SPP73N03S2L-08
SPB73N03S2L-08
SPI73N03S2L-08
Package
P- TO220 -3-1
P- TO263 -3-2
P- TO262 -3-1
Ordering Code
Q67042-S4037
Q67042-S4036
Q67042-S4081
Marking
2N03L08
2N03L08
2N03L08
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
TC=25°C, 1)
ID
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=73A, VDD=25V, RGS=25Ω
Repetitive avalanche energy, limited by Tjmax2)
Reverse diode dv/dt
IS=73A, VDS=24, di/dt=200A/µs, Tjmax=175°C
Gate source voltage
Power dissipation
TC=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID puls
EAS
EAR
dv/dt
VGS
Ptot
Tj , Tstg
Value
73
62
320
170
10
6
±20
107
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Page 1
2003-04-24
1 page  
www.DataSheet4U.com
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
SPP73N03S2L-08
170 Ptot = 107W
A
hg f
140
120
100
80
VGS [V]
a 3.0
b
ec
3.5
4.0
d 4.5
e 5.0
f 5.5
d g 6.0
h 10.0
60
c
40
b
20
a
0
0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
VDS
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 80 µs
140
A
SPI73N03S2L-08
SPP73N03S2L-08,SPB73N03S2L-08
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
SPP73N03S2L-08
28
mΩ
b
24
c
de
22
20
18
16
14
12
10 f
8
g
h
6
4 VGS [V] =
b c de f
2 3.5 4.0 4.5 5.0 5.5
gh
6.0 10.0
0
0
20
40 60
80 100 A
140
ID
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: gfs
80
S
100
80
60
40
20
0
0
1
2
3
4V
6
VGS
Page 5
60
50
40
30
20
10
0
0
25
50 75 100 A 150
ID
2003-04-24
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SPI73N03S2L-08.PDF ] | |
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