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Numéro de référence | MA124 | ||
Description | Switching Diodes | ||
Fabricant | Panasonic | ||
Logo | |||
1 Page
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Switching Diodes
MA6X124 (MA124)
Silicon epitaxial planar type
For switching circuit
I Features
• Four-element contained in one package, allowing high-density
mounting
• Centrosymmetrical wiring, allowing to free from the taping direc-
tion
• Short reverse recovery time trr
• Small terminal capacitance, Ct
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Reverse voltage (DC)
Peak reverse voltage
Average forward current*1
Peak forward current*1
Non-repetitive peak forward
surge current*1,2
VR
VRM
IF
IFM
IFSM
80
80
100
225
500
Junction temperature
Storage temperature
Note) *1 : Value for single diode
*2 : t = 1 s
Tj
Tstg
150
−55 to +150
Unit
V
V
mA
mA
mA
°C
°C
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
1
10°
Unit : mm
0.16+–00..0160
1 : Anode 1
2 : Cathode 1,2,3,4
3 : Anode 2
4 : Anode 3
5 : Cathode 1,2,3,4
6 : Anode 4
Mini6-G2 Package
Marking Symbol: M2C
Internal Connection
61
52
43
I Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse current (DC)
Forward voltage (DC)
Reverse voltage (DC)
Terminal capacitance
Reverse recovery time*
IR VR = 75 V
VF IF = 100 mA
VR IR = 100 µA
Ct VR = 0 V, f = 1 MHz
trr IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
100 nA
1.2 V
80 V
2 pF
3 ns
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
tr tp
10%
t
IF
trr
t
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
111
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Pages | Pages 3 | ||
Télécharger | [ MA124 ] |
No | Description détaillée | Fabricant |
MA120 | Diode (spec sheet) | American Microsemiconductor |
MA121 | Silicon epitaxial planar type | Panasonic |
MA122 | Silicon epitaxial planar type | Panasonic |
MA124 | Switching Diodes | Panasonic |
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