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Número de pieza | 30ETH06 | |
Descripción | Hyperfast Rectifier | |
Fabricantes | Vishay Siliconix | |
Logotipo | ||
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30ETH06
Vishay High Power Products
Hyperfast Rectifier,
30 A FRED PtTM
Base
common
cathode
2
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Dual diode center tap
• Designed and qualified for industrial level
TO-220AC
1
Cathode
3
Anode
PRODUCT SUMMARY
trr (typical)
IF(AV)
VR
28 ns
30 A
600 V
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
Non-repetitive peak surge current
Operating junction and storage temperatures
IFSM
TJ, TStg
TEST CONDITIONS
TC = 103 °C
TJ = 25 °C
VALUES
600
30
200
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
Forward voltage
VBR,
VR
VF
IR = 100 µA
IF = 30 A
IF = 30 A, TJ = 150 °C
600
-
-
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 600 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
2.0
1.34
0.3
60
33
8.0
MAX.
-
2.6
1.75
50
500
-
-
UNITS
V
µA
pF
nH
Document Number: 93018
Revision: 23-Jun-08
For technical questions, contact: [email protected]
www.vishay.com
1
1 page www.datasheet4u.com
Hyperfast Rectifier,
30 A FRED PtTM
VR = 200 V
30ETH06
Vishay High Power Products
L = 70 µH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
0.75 IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 93018
Revision: 23-Jun-08
For technical questions, contact: [email protected]
www.vishay.com
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet 30ETH06.PDF ] |
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