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Galaxy Semi-Conductor - HIGH EFFICIENCY RECTIFIER

Numéro de référence EU1Z
Description HIGH EFFICIENCY RECTIFIER
Fabricant Galaxy Semi-Conductor 
Logo Galaxy Semi-Conductor 





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EU1Z fiche technique
BL GALAXY ELECTRICAL
HIGH EFFICIENCY RECTIFIER
EU1Z(Z)---EU1C(Z)
VOLTAGE RANGE: 200--- 1000 V
CURRENT: 0.25,0.5 A
FEATURES
www.dLaotawshceoest4tu.com
Diffused junction
Low leakage
Low forward voltage drop
Easily cleaned with freon, Alcohol, lsopropand and
similar solvents
MECHANICAL DATA
Case: JEDEC DO-41, molded plastic
Terminals: Axial leads,solderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces, 0.34 grams
Mounting: Any
DO - 41
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
EU1Z
EU1
EU1A
EU1C UNITS
Maximum peak repetitive reverse voltage
VRRM
Maximum RMS voltage
VRMS
Maximum DC blocking voltage
VDC
Maximum average forw ard rectified current
9.5mm lead length
Peak forw ard surge current
@TA=75
IF(AV)
10ms single half-sine-w ave
superimplsed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ IF=IF(AV)
Maximum reverse current
@TA=25
at Rated DC blocking voltage @TA=100
IFSM
VF
IR
Maximum reverse recovery time
(Note1)
trr
Typical junction capacitance
(Note2)
CJ
Typical thermal resistance
(Note3)
Operating junction temperature range
RθJL
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A,IR=1A,Irr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
200 400
140 280
200 400
0.25
600 1000 V
420 700 V
600
1000
V
0.5 A
15.0 A
2.5 V
10.0
150.0
A
100 ns
20 15
17
- 55 ----- + 150
pF
/W
- 55 ----- + 150
www.galaxycn.com
Document Number 0262034
BLGALAXY ELECTRICAL
1.

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