(PDF) MS1001 Datasheet - RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

Número de pieza	MS1001
Descripción	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Fabricantes	Advanced Power Technology
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No Preview Available ! 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS wwHw.FdatSasSheBet4uA.coPmPLICATIONS Features • 30 MHz • 12.5 VOLTS • IMD = -32 dBc • INFINITE VSWR CAPABILITY @ RATED CONDITIONS • POUT = 75 WATTS • GP = 13dB MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications. Diffused emitter resistors provide infinite VSWR capability under rated operating conditions. MS1001 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCBO VCEO VEBO IC PD Tj Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Total Dissipation Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-case Value 36 18 4.0 20 270 200 -65 to +150 0.65 Unit V V V A W ºC ºC ° C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM 1 page

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PDF MS1001 Data sheet ( Hoja de datos )