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MS1051 fiches techniques PDF

Advanced Power Technology - RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

Numéro de référence MS1051
Description RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Fabricant Advanced Power Technology 
Logo Advanced Power Technology 





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MS1051 fiche technique
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE TRANSISTORS
www.datasheet4u.com
HF SSB APLICATIONS
Features
30 MHz
12.5 VOLTS
POUT = 100 WATTS
GPE = 12.0 dB MINIMUM
IMD = –30 dBc
GOLD METALLIZATION
COMMON EMITTER CONFIGURATION
MS1051
DESCRIPTION:
The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for HF communications. This
device utilizes state-of-the-art diffused emitter ballasting to
achieve extreme ruggedness under severe operating
conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCBO
VCEO
VEBO
IC
PDISS
TJ
TSTG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage TEmperature
Value
36
18
4.0
20
290
+200
-65 to +150
THERMAL DATA
RTH(J-C)
Thermal Resistance Junction-case
0.6
Unit
V
V
V
A
W
°C
°C
°C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 11/2005

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