(PDF) MS1076 Datasheet - RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

Número de pieza	MS1076
Descripción	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Fabricantes	Advanced Power Technology
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No Preview Available ! 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS wwHw.dFataSshSeeBt4u.AcomPPLICATIONS Features • 30 MHz • 28 VOLTS • GOLD METALLIZATION • POUT = 220 W PEP • GP = 12 dB GAIN MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability. MS1076 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCEO VEBO IC Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Device Current PDISS TJ TSTG Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Junction - Case Thermal Resistance Value 70 35 4.0 16 320 +200 - 65 to +150 0.7 Unit V V V A W °C °C °C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 1 page

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PDF MS1076 Data sheet ( Hoja de datos )