FQP11N40C Datasheet PDF - Fairchild Semiconductor
| Part Number | FQP11N40C | |
| Description | 400V N-Channel MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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FQP11N40C / FQPF11N40C
N-Channel QFET® MOSFET
400 V, 10.5 A, 530 mΩ
November 2013
Features
• 10.5 A, 400 V, RDS(on) = 530 mΩ (Max.) @ VGS = 10 V,
ID = 5.25 A
• Low Gate Charge (Typ. 28 nC)
• Low Crss (Typ. 85 pF)
• 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
GDS
TO-220
GDS
TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FQP11N40C FQPF11N40C
400
10.5 10.5 *
6.6 6.6 *
42 42 *
± 30
360
11
13.5
4.5
135 44
1.07 0.35
-55 to +150
300
FQP11N40C
0.93
62.5
FQPF11N40C
2.86
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP11N40C / FQPF11N40C Rev. C1
1
www.fairchildsemi.com
|
| |
 
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve of FQP11N40C
100
D = 0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sin g le p u ls e
N otes :
1 . Z θJC(t) = 0 .9 3 °C /W M a x.
2 . D u ty F a c to r, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
101
Figure 11-2. Transient Thermal Response Curve of FQPF11N40C
100
1 0 -1
D =0 .5
0 .2
0 .1
0 .0 5
0 .02
0.0 1
1 0 -2
s in g le p u lse
※ N o te s :
1 . Z θ J C( t ) = 2 . 8 6 ℃ /W M a x .
2 . D u ty F a cto r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
101
©2003 Fairchild Semiconductor Corporation
FQP11N40C / FQPF11N40C Rev. C1
5
www.fairchildsemi.com
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQP11N40C electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FQP11N40C.PDF Datasheet ] | |
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