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EM28C1602C3FL fiches techniques PDF

NanoAmp Solutions - Flash and SRAM Combo Memory

Numéro de référence EM28C1602C3FL
Description Flash and SRAM Combo Memory
Fabricant NanoAmp Solutions 
Logo NanoAmp Solutions 





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EM28C1602C3FL fiche technique
EM28C1602C3FL
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
EM28C1602C3FL
Advance Information
Low Voltage, Extended Temperature
FLASH AND SRAM COMBO MEMORY
www.datasheet4u.com
FEATURES
• Organization: 1,048K x 16 (Flash)
128K x 16 (SRAM)
• Basic configuration:
Flash
Thirty-nine erase blocks
– Eight 4K-word parameter blocks
– Thirty-one 32K-word main memory blocks
SRAM
2Mb SRAM for data storage
– 128K-words
• F_VCC, F_VPP, S_VCC voltages
2.7V (MIN)/3.3V (MAX) F_VCC read voltage
2.7V (MIN)/3.3V (MAX) S_VCC read voltage
1.8V (TYP) F_VPP (in-system PROGRAM/ERASE)
12V ±5% (HV) F_VPP (production programming
compatibility)
1.0V (MIN) S_VCC (SRAM data retention)
• Asynchronous access time
Flash access time: 90ns @ 2.7V F_VCC
SRAM access time: 85ns @ 2.7V S_VCC
• Low power consumption
• Enhanced WRITE/ERASE suspend option
• Read/Write SRAM during program/erase of Flash
• 128-bit chip OTP protection register for security
purposes
• Cross-compatible command set support
• PROGRAM/ERASE cycles
100,000 WRITE/ERASE cycles per block
BALL ASSIGNMENT
66-Ball FBGA (Top View)
1 2 3 4 5 6 7 8 9 10 11 12
A NC NC NC A11 A15 A14 A13 A12 F_Vss NC NC NC
B A16 A8
A10 A9 DQ15 S_W E# DQ14 DQ7
C F_WE # NC
DQ13
DQ6 DQ4 DQ5
D S_Vss F_RP#
DQ12 S_CE2 S_Vcc F_Vcc
E F_WP # F_Vpp
A19 DQ11
DQ10
DQ2 DQ3
F S_L B# S_UB# S_OE #
DQ9 DQ8 DQ0 DQ1
G A18 A17 A7 A6 A3 A2 A1 S_CE1#
H NC NC NC A5 A4 A0 F_CE# F_Vss F_OE# NC NC NC
OPTIONS
• Timing
90ns
MARKING
-90
• Boot Block
Top
Bottom
T
B
• Operating Temperature Range
Extended Temperature (-40oC to +85oC)
ET
• Package
66-ball FBGA (8 x 8 grid)
FL
Part Number Example:
EM28C1602C3FL-90 TET
Stock No. 23134-A 1/01
1
Advance - Subject to Change without Notice

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