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DB-55008L-450 fiches techniques PDF

ST Microelectronics - RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs

Numéro de référence DB-55008L-450
Description RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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DB-55008L-450 fiche technique
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DB-55008L-450
RF power amplifier using 1 x PD55008L-E
N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
Excellent thermal stability
Frequency: 318 - 450 MHz
Supply voltage: 13.6 V
Output power: 8 W
Power gain: 14.6 ± 0.6 dB
Efficiency: 52 % - 73 %
BeO free amplifier
Description
The DB-55008L-450 is a common source
N-channel enhancement-mode lateral field effect
RF power amplifier designed for UHF mobile
applications.
Mechanical specification:
L = 60 mm, W = 30 mm
Table 1.
Device summary
Order codes
DB-55008L-450
March 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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