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KDV310E fiches techniques PDF

KEC - VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning

Numéro de référence KDV310E
Description VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning
Fabricant KEC 
Logo KEC 





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KDV310E fiche technique
SEMICONDUCTOR
www.DataSheet4U.com
TECHNICAL DATA
TV Tuning.
FEATURES
High Capacitance Ratio : C2V/C25V=17.0(Min.)
Low Series Resistance : rs=1.1 (Max.)
Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Reverse Voltage
Junction Temperature
Storage Temperature Range
SYMBOL
VR
Tj
Tstg
RATING
34
150
-55 150
UNIT
V
KDV310E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
C
1
2
D
1. ANODE
2. CATHODE
E
F
DIM
A
B
C
D
E
F
MILLIMETERS
1.60+_ 0.10
1.20+_ 0.10
0.80+_ 0.10
0.30+_ 0.05
0.60+_ 0.10
0.13+_ 0.05
ESC
Marking
Type Name
VD
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Reverse Current
Capacitance
Capacitance Ratio
IR1
IR2
C2V
C25V
C2V/C25V
Series Resistance
rS
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
C(Min.)
0.02
VR=32V
VR=32V, Ta=60
VR=2V, f=1MHz
VR=25V, f=1MHz
-
VR=5V, f=470MHz
(VR=2~25V)
MIN.
-
-
47.0
2.65
17.0
-
TYP.
-
-
-
-
-
-
MAX.
10
100
53.0
3.0
-
1.1
UNIT
nA
pF
2004. 4. 20
Revision No : 0
1/2

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