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KI4330DY fiches techniques PDF

KEXIN - MOSFET ( Transistor )

Numéro de référence KI4330DY
Description MOSFET ( Transistor )
Fabricant KEXIN 
Logo KEXIN 





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KI4330DY fiche technique
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SMD Type
Dual N-Channel 30-V (D-S) MOSFET
KI4330DY
ICIC
Features
TrenchFET Power MOSFETS
100 % Rg Tested
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 )* TA = 25
TA = 70
Pulsed Drain Current
Continuous Source Current (Diode Conductio*n)
Maximum Power Dissipation
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
Parameter
Maximum Junction-to-Ambient*
t 10 sec
Steady-State
Maximum Junction-to-Foot (Drain)
Steady-State
* Surface Mounted on 1" x 1" FR4 Board.
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Symbol
RthJA
RthJF
10 secs
Steady State
30
20
8.7 6.6
7.0 5.3
30
1.7 0.9
2.0 1.1
1.3 0.7
-55 to 150
Typical
Maximum
45 62.5
85 110
26 35
Unit
V
A
A
W
/W
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