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KI4464DY fiches techniques PDF

KEXIN - MOSFET ( Transistor )

Numéro de référence KI4464DY
Description MOSFET ( Transistor )
Fabricant KEXIN 
Logo KEXIN 





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KI4464DY fiche technique
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SMD Type
N-Channel 200-V (D-S) MOSFET
KI4464DY
Features
PWM Optimized for (Lowest Qg and Low RG)
TrenchFET Power MOSFET
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 ) TA = 25
TA = 70
Pulsed Drain Current
Single Avalanch Current
L = 0.1 mH
Single Avalanch Energy
L = 0.1 mH
Continuous Source Current ( Diode Conduction)*
Maximum Power Dissipation *
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
*Surface Mounted on 1" X 1" FR4 Board.
Symbol
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
10 secs
Steady State
200
20
2.2 1.7
1.7 1.3
8
3
0.45
2.1 1.2
2.5 1.5
1.6 0.9
-55 to 150
Unit
V
A
mJ
A
W
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