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Hamamatsu Photonic Systems - 755nm CW Laser Diode

Numéro de référence L7910
Description 755nm CW Laser Diode
Fabricant Hamamatsu Photonic Systems 
Logo Hamamatsu Photonic Systems 





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L7910 fiche technique
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PRELIMINARY DATA
CW LASER DIODES
L7910
Peak Emission Wavelength 755 nm, Radiant Flux 4 mW (CW)
FEATURES
Radiant flux (CW) : 4 mW
Peak Emission Wavelength : 755 nm ± 5 nm
Emitting Area Size : 5 µm x 1 µm
High Stability
Long life
Compact
APPLICATIONS
Printing
Measuring Instrument
Medical Instrument
ABSOLUTE MAXIMUM RATINGS (Top(c) = 38 °C)
Parameter
Radiant Flux
Reverse Voltage (LD)
Reverse Voltage (PD)
Operating Temperature
Storage Temperature
Symbol
Φe
Vrl
Vrd
Top(c)
Tstg
Value
6
2
20
10 to +70
20 to +80
CHARACTERISTICS (Top(c) = 38 °C)
Parameter
Symbol
Conditions
Operating Current
Iop
Peak Emission Wavelength
λp
Φe = 4 mW
Forward Voltage
Vf
Beam Spread Angle
Horizontal
Vertical
θ//
θ
Φe = 4 mW FWHM
Lasing Threshold Current
Ith
Monitor PD Current
Im Φe = 4 mW , Vrd = 15 V
PD Cutoff Frequency
fc Vrd = 15 V (-3dB)
Min.
30
750
1.6
5
31
15
0.5
30
Value
Typ.
57
755
1.9
7
36
35
1.5
50
Unit
mW
V
V
°C
°C
Max.
Unit
76 mA
760 nm
2.2 V
10 degree
41 degree
50 mA
3.5 mA
- MHz
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.

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