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Numéro de référence | ST9012 | ||
Description | PNP Silicon Epitaxial Planar Transistor | ||
Fabricant | SEMTECH | ||
Logo | |||
1 Page
ST 9012
www.DataSheet4U.com
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into three groups, G,
H and I, according to its DC current gain. As
complementary type the NPN transistor 9013 is
recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
Tstg
Value
40
30
5
500
625
150
- 55 to + 150
Unit
V
V
V
mA
mW
OC
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 1 V, -IC = 50 mA
Current Gain Group
at -VCE = 1 V, -IC = 500 mA
Collector Base Cutoff Current
at -VCB = 35 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Base Breakdown Voltage
at -IC = 100 μA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 100 μA
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Base Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Base Emitter Voltage
at -VCE = 1 V, -IC = 100 mA
Gain Bandwidth Product
at -VCE = 6 V, -IC = 20 mA
G
H
I
Symbol
hFE
hFE
hFE
hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
-VBE
fT
Min.
110
177
250
40
-
-
40
30
5
-
-
-
100
Max.
183
250
380
-
100
100
-
-
-
0.6
1.2
1
-
Unit
-
-
-
-
nA
nA
V
V
V
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/03/2009
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Pages | Pages 2 | ||
Télécharger | [ ST9012 ] |
No | Description détaillée | Fabricant |
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