BLS6G3135-120 Datasheet PDF - NXP Semiconductors
| Part Number | BLS6G3135-120 | |
| Description | LDMOS S-Band radar power transistor | |
| Manufacturers | NXP Semiconductors | |
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BLS6G3135-120;
BLS6G3135S-120
LDMOS S-Band radar power transistor
Rev. 01 — 14 August 2007
Preliminary data sheet
1. Product profile
1.1 General description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
VDS PL
(V) (W)
Gp ηD
(dB) (%)
tr
(ns)
tf
(ns)
pulsed RF
3.1 to 3.5 32 120
11 43
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %:
N Output power = 120 W
N Gain = 11 dB
N Efficiency = 43 %
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (3.1 GHz to 3.5 GHz)
I Internally matched for ease of use
I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
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www.DNatXaSPheSete4Um.coicmonductors
BLS6G3135-120; BLS6G3135S-120
LDMOS S-Band radar power transistor
50
ηD
(%)
40
30
20
10
001aag825
(1)
(2)
(3)
160
PL
(W)
120
80
40
001aag826
(2)
(3)
(1)
0
0 40 80 120 160
PL (W)
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
Fig 4. Drain efficiency as a function of load power;
typical values
13
Gp
(dB)
11
001aag827 50
ηD
ηD (%)
Gp 40
9 30
0
0 5 10 15 20
Pi (W)
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
VDS = 32 V; IDq = 100 mA; tp = 300 µs; δ = 10 %.
Fig 5. Load power as a function of input power;
typical values
14
Gp
(dB)
10
001aag828
(2)
(1) (3)
7 20
6
5 10
30
3 3.2 3.4 3.6
f (GHz)
2
0 40 80 120 160
PL (W)
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %;
PL = 120 W.
Fig 6. Power gain and drain efficiency as functions of
frequency; typical values
(1) f = 3.1 GHz.
(2) f = 3.3 GHz.
(3) f = 3.5 GHz.
VDS = 32 V; IDq = 100 mA; tp = 100 µs; δ = 20 %.
Fig 7. Power gain as a function of load power; typical
values
BLS6G3135-120_6G3135S-120_1
Preliminary data sheet
Rev. 01 — 14 August 2007
© NXP B.V. 2007. All rights reserved.
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