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DB-499D-470 fiches techniques PDF

ST Microelectronics - RF power amplifier using 1 x START499D NPN RF silicon transistor

Numéro de référence DB-499D-470
Description RF power amplifier using 1 x START499D NPN RF silicon transistor
Fabricant ST Microelectronics 
Logo ST Microelectronics 





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DB-499D-470 fiche technique
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DB-499D-470
RF power amplifier using 1 x START499D
NPN RF silicon transistor
Preliminary Data
Features
Excellent thermal stability
Frequency: 430 - 470 MHz
Supply voltage: 3.6 V
Output power: 29 dBm
Power gain: 19 dB
Efficiency: 52 %
BeO free amplifier
Description
The DB-499D-470 is a NPN silicon RF power
amplifier designed for UHF 2-way radio
applications
Mechanical specification:
L = 60 mm, W = 30 mm
".W
Table 1.
Device summary
Order codes
DB-499D-470
February 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
11

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