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Numéro de référence | DB-499D-470 | ||
Description | RF power amplifier using 1 x START499D NPN RF silicon transistor | ||
Fabricant | ST Microelectronics | ||
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DB-499D-470
RF power amplifier using 1 x START499D
NPN RF silicon transistor
Preliminary Data
Features
■ Excellent thermal stability
■ Frequency: 430 - 470 MHz
■ Supply voltage: 3.6 V
■ Output power: 29 dBm
■ Power gain: 19 dB
■ Efficiency: 52 %
■ BeO free amplifier
Description
The DB-499D-470 is a NPN silicon RF power
amplifier designed for UHF 2-way radio
applications
Mechanical specification:
L = 60 mm, W = 30 mm
".W
Table 1.
Device summary
Order codes
DB-499D-470
February 2009
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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www.st.com
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Pages | Pages 11 | ||
Télécharger | [ DB-499D-470 ] |
No | Description détaillée | Fabricant |
DB-499D-470 | RF power amplifier using 1 x START499D NPN RF silicon transistor | ST Microelectronics |
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