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PDF P10NB50FP Data sheet ( Hoja de datos )
| Número de pieza | P10NB50FP | |
| Descripción | STP10NB50FP | |
| Fabricantes | ST Microelectronics | |
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STP10NB50
® STP10NB50FP
N - CHANNEL 500V - 0.55Ω - 10.6A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
STP10NB50
500 V
STP10NB50FP 500 V
< 0.60 Ω
< 0.60 Ω
10.6 A
10.6 A
s TYPICAL RDS(on) = 0.55 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
3
2
1
3
2
1
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(•)
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Tstg
Insulation Withstand Voltage (DC)
Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
October 1999
Value
Unit
STP10NB50 STP10NB50FP
500 V
500 V
± 30
V
10.6
10.6(*)
A
6.4
6.4(*)
A
42.4
42.4
A
135
1.08
40
0.32
W
W/oC
4.5 4.5 V/ns
2000
-65 to 150
150
(1) ISD ≤ 10.6 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V
oC
oC
1/9
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Gate Charge vs Gate-source Voltage
STP10NB50 STP10NB50FP
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet P10NB50FP.PDF ] | |
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