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PDF C3931 Data sheet ( Hoja de datos )
| Número de pieza | C3931 | |
| Descripción | NPN Transistor - 2SC3931 | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Transistors
2SC3931www.DataSheet4U.com
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
30
20
3
15
150
150
−55 to +150
Unit
V
V
V
mA
mW
°C
°C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
Marking Symbol: U
1: Base
2: Emitter
3:Collector
EIAJ: SC-70
SMini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 30 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 3 V
Base-emitter voltage
VBE VCB = 6 V, IE = −1 mA
720 mV
Forward current transfer ratio *
hFE VCB = 6 V, IE = −1 mA
65 260
Transition frequency
fT VCB = 6 V, IE = −1 mA, f = 200 MHz 450 650
MHz
Common-emitter reverse transfer
capacitance
Cre VCB = 6 V, IE = −1 mA, f = 10.7 MHz
0.8 1.0
pF
Power gain
Noise figure
GP VCB = 6 V, IE = −1 mA, f = 100 MHz
NF VCB = 6 V, IE = −1 mA, f = 100 MHz
24
3.3
dB
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
C
D
hFE
65 to 160
100 to 260
Publication date: March 2003
SJC00142BED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet C3931.PDF ] | |
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