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Numéro de référence | 2SD1663 | ||
Description | Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD1663
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCES
VCEO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector- Emitter Voltage
wwwCollector-Emitter Voltage
VALUE UNIT
1500
V
1500
V
700 V
VEBO
Emitter-Base Voltage
7.7 V
IC Collector Current-Continuous
5A
IBB Base Current-Continuous
Collector Power Dissipation
PC @ TC=25℃
TJ Junction Temperature
3A
80 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SD1663 ] |
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