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2SD1663 fiches techniques PDF

Inchange Semiconductor - Power Transistor

Numéro de référence 2SD1663
Description Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SD1663 fiche technique
INCHANGE Semiconductor
www.DataSheet4U.com
isc Silicon NPN Power Transistor
isc Product Specification
2SD1663
DESCRIPTION
·High Collector-Base Breakdown Voltage-
: V(BR)CBO= 1500V (Min.)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
VCBO
VCES
VCEO
PARAMETER
i.cnCollector-Base Voltage
.iscsemCollector- Emitter Voltage
wwwCollector-Emitter Voltage
VALUE UNIT
1500
V
1500
V
700 V
VEBO
Emitter-Base Voltage
7.7 V
IC Collector Current-Continuous
5A
IBB Base Current-Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
3A
80 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn

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