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Numéro de référence | KTX212E | ||
Description | Transistors | ||
Fabricant | KEC | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
Including two devices in TES6.
(Thin Extreme Super mini type with 6 leads.)
With Built-in bias resistors.
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT
Q1 C
Q2
OUT
B
R1
IN
Q2
R1=2.2KΩ
R2=2.2KΩ
R2
E COMMON
EQUIVALENT CIRCUIT (TOP VIEW)
65 4
Marking
65
Type Name
4
Q1
Q2
BG
12 3
Q1 MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
)
Collector Current
* Single pulse Pw=1mS.
Q2 MAXIMUM RATING (Ta=25
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
)
Q1, Q2 MAXIMUM RATING (Ta=25
CHARACTERISTIC
Power Dissipation
Junction Temperature
wwwS.tDoraatgaeShTeeemt4pUer.caotumre Range
* Total Raing.
)
2002. 10. 30
Revision No : 0
1 23
SYMBOL
VCBO
VCEO
VEBO
IC
ICP *
SYMBOL
VO
VI
IO
SYMBOL
PD *
Tj
Tstg
KTX212E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1 6 DIM MILLIMETERS
A 1.6+_ 0.05
A1 1.0+_ 0.05
2 5 B 1.6 +_0.05
B1 1.2+_ 0.05
3 4 C 0.50
D 0.2+_ 0.05
H 0.5+_ 0.05
J 0.12+_ 0.05
P P P5
1. Q1 (EMITTER)
2. Q1 (BASE)
3. Q2 OUT (COLLECTOR)
4. Q2 COMMON (EMITTER)
5. Q2 IN (BASE)
6. Q1 (COLLECTOR)
TES6
RATING
15
12
6
500
1
RATING
50
12, -10
100
RATING
200
150
-55 150
UNIT
V
V
V
UNIT
V
V
UNIT
1/4
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Pages | Pages 4 | ||
Télécharger | [ KTX212E ] |
No | Description détaillée | Fabricant |
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