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S30D45C fiches techniques PDF

Won-Top Electronics - (S30D30C - S30D60C) 30A DUAL SCHOTTKY BARRIER RECTIFIER

Numéro de référence S30D45C
Description (S30D30C - S30D60C) 30A DUAL SCHOTTKY BARRIER RECTIFIER
Fabricant Won-Top Electronics 
Logo Won-Top Electronics 





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S30D45C fiche technique
WTE
POWER SEMICONDUCTORS
S30D30C – S30D60C Pb
30A DUAL SCHOTTKY BARRIER RECTIFIER
Features
! Schottky Barrier Chip
! Guard Ring for Transient Protection
! Low Forward Voltage Drop
! Low Reverse Leakage Current
! High Surge Current Capability
! Plastic Material has UL Flammability
S
R
Classification 94V-O
L
H
J
PIN1 2 3
K
P
Mechanical Data
! Case: TO-3P, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-750, Method 2026
! Polarity: See Diagram
! Weight: 5.6 grams (approx.)
! Mounting Position: Any
! Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
N
M
A
B
C
GD
TO-3P
Dim Min
Max
A 3.20
3.50
B 4.70
5.30
C — 23.00
D 19.00
E 2.80
3.20
G 0.45
0.85
H — 16.20
J 1.70
2.70
K
3.15 Ø
3.65 Ø
L
4.50
M 5.25
5.65
N 1.10
1.40
P
2.50
R 11.70 12.70
S 5.00
6.00
All Dimensions in mm
PIN 1 -
PIN 3 -
+
Case, PIN 2
E
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
www.DataSheet4U.com
Characteristic
Symbol
S30D
30C
S30D
35C
S30D
40C
S30D
45C
S30D
50C
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
30
35
40
45
50
VR
S30D
60C
60
RMS Reverse Voltage
VR(RMS)
21
25
28
32
35
42
Average Rectified Output Current
@TC = 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
IO
IFSM
30
275
Forward Voltage
@IF = 15A
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
Typical Junction Capacitance (Note 1)
VFM
IRM
Cj
0.55
1.0
60
1100
0.65
Typical Thermal Resistance Junction to Case (Note 2)
RJC
1.4
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Unit
V
V
A
A
V
mA
pF
°C/W
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
S30D30C – S30D60C
1 of 4
© 2006 Won-Top Electronics

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