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WCMA4016U4X fiches techniques PDF

Weida Semiconductor - 256K x 16 Static RAM

Numéro de référence WCMA4016U4X
Description 256K x 16 Static RAM
Fabricant Weida Semiconductor 
Logo Weida Semiconductor 





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WCMA4016U4X fiche technique
A4016U4X
WCMA4016U4X
Features
• Low Voltage range:
— 2.7V-3.3V
• Ultra-low active power
— Typical active current: 1.5 mA @ f = 1MHz
— Typical active current: 7 mA @ f = fmax
• Low standby power
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
Functional Description
The WCMA4016U4X is a high-performance CMOS static
RAMs organized as 256K words by 16 bits. These devices
feature advanced circuit design to provide ultra-low active cur-
rent. This device is ideal for portable applications such as cel-
lular telephones. The devices also have an automatic pow-
er-down feature that significantly reduces power consumption
by 80% when addresses are not toggling. The device can also
be put into standby mode reducing power consumption by
256K x 16 Static RAM
more than 99% when deselected (CE HIGH or both BLE and
BHE are HIGH). The input/output pins (I/O0 through I/O15) are
placed in a high-impedance state when: deselected (CE
HIGH), outputs are disabled (OE HIGH), both Byte High En-
able and Byte Low Enable are disabled (BHE, BLE HIGH), or
during a write operation (CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is
written into the location specified on the address pins (A0
through A17). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O8 through I/O15) is written into the location
specified on the address pins (A0 through A17).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O8 to I/O15. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The WCMA4016U4X is available in a 48-ball FBGA package.
Logic Block Diagram
www.DataSheet4U.com
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
DATA IN DRIVERS
256K x 16
RAM Array
2048 x 2048
I/O0 – I/O7
I/O8 – I/O15
COLUMN DECODER
Power -Down
Circuit
CE
BHE
BLE
BHE
WE
CE
OE
BLE

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