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FM1100-S fiches techniques PDF

Formosa MS - (FM120-S - FM1100-S) Chip Schottky Barrier Diodes

Numéro de référence FM1100-S
Description (FM120-S - FM1100-S) Chip Schottky Barrier Diodes
Fabricant Formosa MS 
Logo Formosa MS 





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FM1100-S fiche technique
Chip Schottky Barrier Diodes
FM120-S THRU FM1100-S
Formosa MS
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting Position : Any
Weight : 0.0015 ounce, 0.05 gram
SMA-S
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.063(1.6)
0.055(1.4)
0.106(2.7)
0.091(2.3)
0.181(4.6)
0.165(4.2)
0.040(1.0) Typ.
0.071(1.8)
0.060(1.5)
0.040 (1.0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
www.DaFtaorSwharedetr4eUct.cifoimed current
Forward surge current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Reverse current
Thermal resistance
VR = VRRM TA = 25oC
VR = VRRM TA = 125oC
Junction to ambient
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
Storage temperature
Symbol
IO
IFSM
IR
RqJA
CJ
TSTG
MIN.
-55
TYP.
88
120
MAX.
1.0
UNIT
A
30 A
0.5
10
+150
mA
mA
oC / w
pF
oC
SYMBOLS
FM120-S
FM130-S
FM140-S
FM150-S
FM160-S
FM180-S
FM1100-S
MARKING
CODE
SS12
SS13
SS14
SS15
SS16
SS18
S110
VRRM *1
(V)
20
30
40
50
60
80
100
VRMS *2
(V)
14
21
28
35
42
56
70
VR *3
(V)
20
30
40
50
60
80
100
VF *4
(V)
0.50
0.70
0.85
Operating
temperature
(oC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage

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