PDF MW7IC915NT1 Data sheet ( Hoja de datos )

Número de pieza	MW7IC915NT1
Descripción	RF LDMOS Wideband Integrated Power Amplifier
Fabricantes	Freescale Semiconductor
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No Preview Available ! Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW7IC915N wideband integrated circuit is designed with on - chip matching that makes it usable from 698 to 960 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. Driver Application — 900 MHz • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 865 MHz 880 MHz 895 MHz 37.9 17.1 - 50.4 38.0 17.4 - 50.6 37.8 17.5 - 51.3 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 23.5 Watts CW (3 dB Input Overdrive from Rated Pout) • Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 30 to 41.5 dBm CW Pout. • Typical Pout @ 1 dB Compression Point ] 15.5 Watts CW Driver Application — 700 MHz • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency Gps (dB) PAE (%) ACPR (dBc) 728 MHz www.DataSheet4U.com748 MHz 768 MHz 37.8 17.2 - 49.5 37.8 17.3 - 50.5 37.7 17.3 - 51.4 Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • On - Chip Matching (50 Ohm Input, DC Blocked) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 16 mm, 13 inch Reel. Document Number: MW7IC915N Rev. 0, 9/2009 MW7IC915NT1 728 - 960 MHz, 1.6 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER CASE 1894 - 01 PQFN 8x8 PLASTIC 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2009. All rights reserved. RF Device Data Freescale Semiconductor MW7IC915NT1 1 1 page VG1 R1 VG2 R2 C8 C10 C12 C7 C9 C11 C19 C13 C15 C17 VD2 C1 MW7IC915N Rev 3 C2 C3 C4 C5 C6 C14 C16 C18 VD1 C20 Figure 3. MW7IC915NT1 Test Circuit Component Layout Table 6. MW7IC915NT1 Test Circuit Component Designations and Values Part Description Part Number C1 1.8 pF Chip Capacitor ATC100B1R8BT500XT C2, C5 0.8 pF Chip Capacitors ATC100B0R8BT500XT C3 6.2 pF Chip Capacitor ATC100B6R2BT500XT C4 3.3 pF Chip Capacitor ATC100B3R3CT500XT C6, C11, C12, C13, C14 47 pF Chip Capacitors ATC100B470JT500XT www.DataShCe7e,t4CU8.com C9, C10 1 μF Chip Capacitors 0.01 μF Chip Capacitors GRM31MR71H105KA88L GRM32MR71H104JA01L C15, C16 4.7 μF Chip Capacitors GRM31CR71H475KA12L C17, C18 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L C19, C20 100 μF, 50 V Electrolytic Capacitors MCGPR50V107M8X11 - RH R1, R2 2 kΩ, 1/4 W Resistors CRCW12062K00FKEA Manufacturer ATC ATC ATC ATC ATC Murata Murata Murata Murata Multicomp Vishay RF Device Data Freescale Semiconductor MW7IC915NT1 5 5 Page www.DataSheet4U.com TYPICAL CHARACTERISTICS — 700 MHz 38.8 17.5 PAE 38.6 17 38.4 VDD = 28 Vdc 38.2 Pout = 1.6 W (Avg.), IDQ1 = 50 mA IDQ2 = 144 mA, Single−Carrier W−CDMA, 3.84 MHz 38 Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF PARC 37.8 16.5 16 Gps −49 −50 37.6 IRL −51 ACPR 37.4 −52 710 720 730 740 750 760 770 780 790 f, FREQUENCY (MHz) Figure 14. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.6 Watts Avg. −10 −20 −30 −40 41 VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Single−Carrier 40 W−CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 39 90 80 70 38 Gps 728 MHz 37 768 MHz 748 MHz 36 35 ACPR 34 748 MHz 768 MHz PAE 728 MHz 60 50 748 MHz 40 768 MHz 30 20 33 10 1 10 20 Pout, OUTPUT POWER (WATTS) AVG. Figure 15. Single - Carrier W - CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power −15 −20 −25 −30 −35 −40 −45 −50 −55 40 Gain 30 0 −10 20 −20 10 −30 0 −10 300 VDD = 28 Vdc Pin = −30 dBm IDQ1 = 50 mA IDQ2 = 144 mA 600 IRL 900 −40 −50 1200 f, FREQUENCY (MHz) Figure 16. Broadband Frequency Response 0.5 0 −0.5 −1 RF Device Data Freescale Semiconductor MW7IC915NT1 11 11 Page

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