PDF MW7IC930NR1 Data sheet ( Hoja de datos )

Número de pieza	MW7IC930NR1
Descripción	RF LDMOS Wideband Integrated Power Amplifiers
Fabricantes	Freescale Semiconductor
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No Preview Available ! Freescale Semiconductor Technical Data Document Number: MW7IC930N Rev. 0, 8/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC930N wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 960 MHz. This multi - stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation. Driver Application — 900 MHz • CT10yhp6aincmanAleS,l IBiDnaQgnl2ed=-wCi2da8trh5rie=mr3AW.,8P-4CoMuDtHM=zA3, .IP2nepWrufatotrStmsigaAnnvacgle.P,:AIVQRDDM==a7g.25n8idtuVBdoe@ltsC,0lIi.Dp0Qp1i1%n=g, Probability on CCDF. Frequency (1) Gps (dB) PAE (%) ACPR (dBc) MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 728 - 768 MHz, 920 - 960 MHz, 3.2 W AVG., 28 V SINGLE W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 920 MHz 36.6 16.1 - 48.0 940 MHz 36.8 16.7 - 48.7 960 MHz 36.6 17.3 - 48.6 • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 30 Watts CW Pout. • TIDyQp2ic=al3P4o0utm@A 1 dB Compression Point ] 31 Watts CW, IDQ1 = 40 mA, Driver Application — 700 MHz • CT10yhp6aincmanAleS,l IBiDnaQgnl2ed=-wCi2da8trh5rie=mr3AW.,8P-4CoMuDtHM=zA3, .IP2nepWrufatotrStmsigaAnnvacgle.P,:AIVQRDDM==a7g.25n8idtuVBdoe@ltsC,0lIi.Dp0Qp1i1%n=g, Probability on CCDF. CASE 1886 - 01 TO - 270 WB - 16 PLASTIC MW7IC930NR1 CASE 1887 - 01 TO - 270 WB - 16 GULL PLASTIC MW7IC930GNR1 Frequency 728 MHz 748 MHz 768 MHz Gps (dB) 36.4 36.4 36.4 PAE (%) 16.1 16.1 16.0 ACPR (dBc) - 47.7 - 47.8 - 47.9 CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW7IC930NBR1 Features www.Data•SheCeht4aUra.ccotmerized with Series Equivalent Large - Signal Impedance Parameters and Common Source S - Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (2) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. GND 1 NC 2 NC 3 VDS1 GND 4 5 16 GND 15 NC VDS1 RFin 6 14 RFout/VDS2 GND 7 RFin RFout/VDS2 VGS1 VGS2 8 9 NC 10 13 NC GND 11 12 GND VGS1 VGS2 Quiescent Current Temperature Compensation (2) (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. 900 MHz Driver Frequency Band table data collected in the 900 MHz application test fixture. See Fig. 7. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2009. All rights reserved. RF Device Data Freescale Semiconductor MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 1 1 page VDD1 C17 C18 VGG1 R4 R5 R6 VGG2 R1 R2 R3 C9 C8 C7 C6 C5 C4 C2 C1 C3 C14 C15 C13 R7 VDD2 C16 C11 C12 C10 MW7IC930N Rev 2 Figure 3. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Layout — 900 MHz Table 6. MW7IC930NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 900 MHz Part Description Part Number Manufacturer C1, C4, C7 47 pF Chip Capacitors ATC600F470JT250XT ATC C2, C5, C8 10 nF, 50 V Chip Capacitors C0603C103J5RAC - TU Kemet C3, C6 1 μF, 50 V Chip Capacitors GRM21BR71H105KA12L Murata C9, C15 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C10 16 pF Chip Capacitor ATC100B160JT500XT ATC www.DataShCe1e1t4U.com 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC C12 7.5 pF Chip Capacitor ATC100B7R5CT500XT ATC C13, C14 47 pF Chip Capacitors ATC100B470JT500XT ATC C16, C17 100 μF, 50 V Electrolytic Capacitors MCGPR35V337M10X16 - RH Multicomp C18 0.5 pF Chip Capacitor ATC100B0R5BT500XT ATC R1, R2, R3, R4, R5, R6 1000 Ω, 1/4 W Chip Resistors CRCW12061K00FKEA Vishay R7 0 Ω, 3A Chip Resistor CRCW12060000Z0EA Vishay PCB 0.020″, εr = 3.5 RF - 35 Taconic RF Device Data Freescale Semiconductor MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 5 5 Page www.DataSheet4U.com TYPICAL CHARACTERISTICS — 700 MHz 37.5 37 36.5 Gps 748 MHz 36 VDD = 28 Vdc 35.5 IDQ1 = 106 mA, IDQ2 = 285 mA Single−Carrier W−CDMA, 3.84 MHz 35 Channel Bandwidth, Input Signal 34.5 PAR = 7.5 dB @ 0.01% Probability on CCDF 34 PAE 33.5 728 MHz 768 MHz 33 32.5 1 ACPR 748 MHz 10 60 768 MHz 54 48 728 MHz 42 36 30 24 748 MHz 18 12 6 728 MHz 0 50 Pout, OUTPUT POWER (WATTS) AVG. Figure 14. Single - Carrier W - CDMA Power Gain, Power Added Efficiency and ACPR versus Output Power — 700 MHz 0 −5 −10 −15 −20 −25 −30 −35 −40 −45 −50 VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg. f MHz Zin W Zload W 710 25.21 - j1.21 8.57 + j2.52 720 33.76 + j5.36 8.52 + j2.46 730 38.78 + j1.40 8.44 + j2.34 740 40.14 - j0.76 8.36 + j2.16 750 35.46 - j1.15 8.30 + j2.00 760 34.65 - j0.53 8.32 + j1.90 770 34.75 - j0.43 8.31 + j1.86 780 36.20 + j0.81 8.27 + j1.98 790 36.18 + j1.33 8.23 + j2.12 Zin = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network Z in Z load Figure 15. Series Equivalent Input and Load Impedance — 700 MHz RF Device Data Freescale Semiconductor MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1 11 11 Page

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