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Cystech Electonics Corp - High Voltage PNP Epitaxial Planar Transistor

Numéro de référence BTA1759N3
Description High Voltage PNP Epitaxial Planar Transistor
Fabricant Cystech Electonics Corp 
Logo Cystech Electonics Corp 





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BTA1759N3 fiche technique
CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
BTA1759N3
Description
High breakdown voltage. (BVCEO=-400V)
Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.
Wide SOA (safe operation area).
Complementary to BTC4505N3.
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Issued Date : 2003.05.09
Revised Date : 2004.04.02
Page No. : 1/4
Symbol
BTA1759N3
Outline
SOT-23
BBase
CCollector
EEmitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
-400
-400
-7
-300
225
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTA1759N3
CYStek Product Specification

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