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PDF BTB1216J3 Data sheet ( Hoja de datos )
| Número de pieza | BTB1216J3 | |
| Descripción | PNP Epitaxial Planar High Current (High Performance) Transistor | |
| Fabricantes | Cystech Electonics Corp | |
| Logotipo |  |
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CYStech Electronics Corp.
Spwewc.wN.oD.a:tCa8S1h1eJe3t4U.com
Issued Date : 2008.12.10
Revised Date : 2009.02.04
Page No. : 1/7
PNP Epitaxial Planar High Current (High Performance) Transistor
BTB1216J3
BVCEO
IC
-140V
-4A
RCE(SAT) 90mΩ typ.
Features
• 4 Amps continuous current, up to 10 Amps peak current
• Very low saturation voltage
• Excellent gain characteristics specified up to 3 Amps
• Extremely low equivalent on resistance, RCE(SAT)=90mΩ at 3A
• RoHS compliant package
Symbol
BTB1216J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B CE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation @TA=25°C
Power Dissipation @TC=25°C
Operating and Storage Temperature Range
Note: 1.Single pulse, Pw≤10ms
BTB1216J3
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Tj ; Tstg
Limits
-180
-140
-6
-4
-10 (Note 1)
-1
1
20
-55 ~ +150
Unit
V
V
V
A
A
A
W
°C
CYStek Product Specification
1 page  
Reel Dimension
CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh8e11eJt43U.com
Issued Date : 2008.12.10
Revised Date : 2009.02.04
Page No. : 5/7
Carrier Tape Dimension
BTB1216J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BTB1216J3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BTB1216J3 | PNP Epitaxial Planar High Current (High Performance) Transistor | Cystech Electonics Corp |
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