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Número de pieza | BTB1580J3 | |
Descripción | PNP Epitaxial Planar Transistor | |
Fabricantes | Cystech Electonics Corp | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BTB1580J3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
PNP Epitaxial Planar Transistor
BTB1580J3
BVCEO
IC
RCESAT
wSIspwseuwce.d.DNDaoa.tat:eSC:h62e50e50Jt843.U0.7c.2o5m
Revised Date :2009.02.04
Page No. : 1/6
-120V
-4A
600mΩ
Description
The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low
speed switching application. Pb-free package process is adopted.
Equivalent Circuit
BTB1580J3
B
≒≒86kK
≒60
E
B:Base
C:Collector
E:Emitter
C
Outline
TO-252
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation(TA=25℃)
Power Dissipation(TC=25℃)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Single Pulse Pw≦300μs, Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
RθJA
RθJC
Tj
Tstg
BTB1580J3
Limits
-120
-120
-5
-4
-6
1.5
20
83.3
6.25
150
-55~+150
Unit
V
V
V
A
A
W
W
°C/W
°C/W
°C
°C
CYStek Product Specification
1 page CYStech Electronics Corp.
wSIspwseuwce.d.DNDaoa.tat:eSC:h62e50e50Jt843.U0.7c.2o5m
Revised Date :2009.02.04
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTB1580J3
CYStek Product Specification
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BTB1580J3.PDF ] |
Número de pieza | Descripción | Fabricantes |
BTB1580J3 | PNP Epitaxial Planar Transistor | Cystech Electonics Corp |
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