(PDF) BTC5181WC3 Datasheet - High Frequency NPN Epitaxial Planar Transistor

Número de pieza	BTC5181WC3
Descripción	High Frequency NPN Epitaxial Planar Transistor
Fabricantes	Cystech Electonics Corp
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No Preview Available ! CYStech Electronics Corp. High Frequency NPN Epitaxial Planar Transistor BTC5181WC3 wSIspwseuwce.d.DNDaoa.tat:eSC:h22e10e30tW34.UC0.83c.1o5m Revised Date : Page No. : 1/3 Description The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification application. Symbol Outline BTC5181WC3 SOT-523 B：Base C：Collector E：Emitter Features • Low current consumption and high gain: ∣S21e∣² = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHz ∣S21e∣² = 11dB ( typ. ) at VCE= 1 V, IC= 5 mA, f = 2 GHz • Super mini-mold package Applications • Low noise and high gain amplifiers & Oscillator buffer amplifiers Absolute Maximum Ratings (TA=25℃) Parameters Symbol Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature VCEO VCBO VEBO IC Pd Tj Tstg Limits 3 5 2 10 30 150 -65~+150 Unit V V V mA mW °C °C BTC5181WC3 CYStek Product Specification 1 page

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PDF BTC5181WC3 Data sheet ( Hoja de datos )