(PDF) BTC5201D3 Datasheet - Low Vcesat NPN Epitaxial Planar Transistor

Número de pieza	BTC5201D3
Descripción	Low Vcesat NPN Epitaxial Planar Transistor
Fabricantes	Cystech Electonics Corp
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No Preview Available ! CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTC5201D3 Spec. No. : C653D3 wIswsuwe.dDaDtaatSeh:e2e0t40U3..c1o0m.03 Revised Date : Page No. : 1/4 Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics Symbol BTC5201D3 Outline TO-126ML B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. BTC5201D3 Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 80 80 6 8 16 (Note 1) 1 1.5 20 83.3 6.25 150 -55~+150 Unit V V V A A W °C/W °C/W °C °C CYStek Product Specification 1 page

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PDF BTC5201D3 Data sheet ( Hoja de datos )