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PDF BTD1816I3 Data sheet ( Hoja de datos )
| Número de pieza | BTD1816I3 | |
| Descripción | Low Vcesat NPN Epitaxial Planar Transistor | |
| Fabricantes | Cystech Electonics Corp | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTD1816I3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1816I3
BVCEO
IC
RCESAT
wSIspwseuwce.d.DNDaoa.tat:eSC:h82e20e10It534.U1.0c.0o5m
Revised Date :2009.02.04
Page No. : 1/6
100V
4A
50mΩ
Features
• Low collector-to-emitter saturation voltage
• High-speed switching
• Large current capability
• Good linearity of hFE
• High fT
• RoHS compliant package
Applications
• Suitable for relay drivers, high speed inverters, converters, and other high current switching applications.
Symbol
BTD1816I3
Outline
TO-251
B：Base
C：Collector
E：Emitter
BB CC E
BTD1816I3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
wSIspwseuwce.d.DNDaoa.tat:eSC:h82e20e10It534.U1.0c.0o5m
Revised Date :2009.02.04
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD1816I3
CYStek Product Specification
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BTD1816I3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BTD1816I3 | Low Vcesat NPN Epitaxial Planar Transistor | Cystech Electonics Corp |
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