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Número de pieza | BTD882I3 | |
Descripción | Low Vcesat NPN Epitaxial Planar Transistor | |
Fabricantes | Cystech Electonics Corp | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BTD882I3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD882I3
BVCEO
IC
RCESAT
wSIspwseuwce.d.DNDaoa.tat:eSC:h82e40e80It334.-U0H.4c.0o2m
Revised Date : 2009.02.04
Page No. : 1/6
30V
3A
125mΩ typ.
Features
• Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A
• Excellent current gain characteristics
• Complementary to BTB772I3
• RoHS compliant package
Symbol
BTD882I3
Outline
TO-251
B:Base
C:Collector
E:Emitter
BB CC E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw≦350μs,Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(Ta=25℃)
Pd(Tc=25℃)
Tj
Tstg
BTD882I3
Limit
40
30
5
3
7
1
10
150
-55~+150
*1
Unit
V
V
V
A
A
W
°C
°C
CYStek Product Specification
1 page CYStech Electronics Corp.
wSIspwseuwce.d.DNDaoa.tat:eSC:h82e40e80It334.-U0H.4c.0o2m
Revised Date : 2009.02.04
Page No. : 5/6
Recommended wave soldering condition
Product
Peak Temperature
Pb-free devices
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Pb-free Assembly
Average ramp-up rate
(Tsmax to Tp)
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
Time 25 °C to peak temperature
6 minutes max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTD882I3
CYStek Product Specification
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BTD882I3.PDF ] |
Número de pieza | Descripción | Fabricantes |
BTD882I3 | Low Vcesat NPN Epitaxial Planar Transistor | Cystech Electonics Corp |
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