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BTP955L3 fiches techniques PDF

Cystech Electonics - PNP Epitaxial Planar High Current (High Performance) Transistor

Numéro de référence BTP955L3
Description PNP Epitaxial Planar High Current (High Performance) Transistor
Fabricant Cystech Electonics 
Logo Cystech Electonics 





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BTP955L3 fiche technique
CYStech Electronics Corp.
Spwewc.wN.Do.a:tCa6Sh06eLe3t4U.com
Issued Date : 2005.02.04
Revised Date : 2005.03.04
Page No. : 1/6
PNP Epitaxial Planar High Current (High Performance) Transistor
BTP955L3
Features
4 Amps continuous current, up to 10 Amps peak current
Very low saturation voltage
Excellent gain characteristics specified up to 3 Amps
Ptot=3Watts
Extremely low equivalent on resistance, RCE(SAT)=90mat 3A
Pb-free package
Symbol
BTP955L3
Outline
SOT-223
C
BBase
CCollector
EEmitter
E
C
B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
Power Dissipation @TA=25°C
Operating and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Pd
Tj ; Tstg
Limits
-180
-140
-6
-4
-10
-1
3 (Note)
-55 ~ +150
Unit
V
V
V
A
A
A
W
°C
Note: The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal
to 4 square inch minimum.
BTP955L3
CYStek Product Specification

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