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MTB12N04J3 fiches techniques PDF

Cystech Electonics - N -Channel Enhancement Mode Power MOSFET

Numéro de référence MTB12N04J3
Description N -Channel Enhancement Mode Power MOSFET
Fabricant Cystech Electonics 
Logo Cystech Electonics 





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MTB12N04J3 fiche technique
CYStech Electronics Corp.
wSpwewc..DNao.ta: SCh7e0e7Jt43U.com
Issued Date : 2009.04.23
Revised Date :
Page No. : 1/7
N -Channel Enhancement Mode Power MOSFET
MTB12N04J3
BVDSS
40V
ID 30A
Features
Low Gate Charge
Simple Drive Requirement
RoHS compliant & Halogen-free package
RDSON(MAX)
12mΩ
Equivalent Circuit
MTB12N04J3
Outline
TO-252
GGate DDrain
SSource
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=20A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
MTB12N04J3
Limits
40
±20
30
20
120
20
20
10
50
26
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification

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