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Numéro de référence | ACE3401 | ||
Description | P-Channel Enhancement Mode MOSFET | ||
Fabricant | ACE Technology | ||
Logo | |||
ACE3401www.DataSheet4U.com
Technology P-Channel Enhancement Mode MOSFET
Description
The ACE3401 is the P-Channel logic enhancement mode power field effect transistors are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
• -30V/-4.0A, RDS(ON)=55mΩ@VGS=-10V
• -30V/-3.2A, RDS(ON)=65mΩ@VGS=-4.5V
• -30V/-1.2A, RDS(ON)=75mΩ@VGS=-2.5V
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability
• SOT-23-3L package design
Application
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• Load Switch
• DSC
• LCD Display inverter
Absolute Maximum Ratings
(TA=25℃ Unless otherwise noted)
Parameter
Symbol Typical Unit
Drain-Source Voltage
VDSS -30 V
Gate-Source Voltage
VGSS ±12 V
Continuous Drain Current (TJ=150℃)
TA=25℃
TA=70℃
ID
-40 A
-3.2
Pulsed Drain Current
IDM -15 A
Continuous Source Current (Diode Conduction) IS
-1.0 A
Power Dissipation
TA=25℃
TA=70℃
PD
1.25 W
0.8
Operating Junction Temperature
TJ 150 ℃
Storage Temperature Range
TSTG -55/150 ℃
Thermal Resistance-Junction to Ambient
RθJA 120 ℃/W
VER 1.2 1
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Pages | Pages 8 | ||
Télécharger | [ ACE3401 ] |
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ACE3401 | P-Channel Enhancement Mode MOSFET | ACE Technology |
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