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PDF ACE2304 Data sheet ( Hoja de datos )
| Número de pieza | ACE2304 | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | ACE Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ACE2304 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Technology
ACE2304www.DataSheet4U.com
N-Channel Enhancement Mode MOSFET
Description
The ACE2304 is the N-Channel logic enhancement mode power field effect transistor are produced
using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook
computer power management and Battery powered circuits, and low in-line power loss are needed in a
very small outline surface mount package.
Features
• 30V/3.2A, RDS(ON)=65mΩ@VGS=10V
• 30V/2.0A, RDS(ON)=90mΩ@VGS=4.5V
• Super high density cell design for extremely low RDS(ON)
• Exceptional on-resistance and maximum DC current capability
Application
• Power Management in Note book
• Portable Equipment
• Battery Powered System
• DC/DC Converter
• Load Switch
• DSC
• LCD Display inverter
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
30 V
±20 V
3.2
2.6
A
10 A
1.25 A
1.25
0.8
W
150 OC
-55/150 OC
100 OC/W
VER 1.2 1
1 page  
ACE2304www.DataSheet4U.com
Technology N-Channel Enhancement Mode MOSFET
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
VER 1.2 5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ACE2304.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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