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Número de pieza | LB11600JV | |
Descripción | Brushless Motor Predriver IC | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
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No Preview Available ! Ordering number : EN8321A
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LB11600JV
Monolithic Digital IC
Brushless Motor Predriver IC for
Automotive Applications
Overview
The LB11600JV is a direct PWM drive predriver IC appropriate for 3-phase power brushless motors in automotive
applications. This IC can implement either high side PWM drive or low side PWM drive motor driver circuits depending
on the configuration of the output circuits, which use discrete transistors such as MOSFETs or bipolar transistors. In
addition to a full complement of protection functions, including overcurrent, thermal, motor constraint, and undervoltage
protection, the LB11600JV also provides an integrated speed control function. Thus the LB11600JV can implement high
reliability/high functionality drive circuits.
Functions
• Three-phase bipolar drive (UH, VH, and WH pins, PWM control)
• Forward/reverse switching circuit
• Overcurrent protection circuit
• Undervoltage protection circuit
• Motor constraint protection circuit
• Thermal protection circuit
• Speed control circuit
Applications
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Supply voltage
Output Circuit current
Allowable power dissipation
Operating temperature
Storage temperature
Symbol
VCC max
IO max
Pd max
Topr
Tstg
Conditions
VCC Pin
UL, VL, WL, UH, VH, and WH pins
Independent IC
Rated value
14.5
40
0.5
-40 to 100
-55 to 150
Unit
V
mA
W
°C
°C
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
D2706 MS IM 20060831-S00005 / 92706 / D0205 MH OT B8-8935 No.8321-1/30
1 page LB11600JV
Block Diagram and Application Circuit 1
: MOS transistor drive (low side PWM), speed control feedback application
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No.8321-5/30
5 Page Continued from preceding page.
Pin
Number
Function
24 VCC
25 S/S
LB11600JV
Function
VCC power supply connection.
Start/stop control.
A low level sets the IC to the start state
and a high level or open sets it to the
stop state.
VCC
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Equivalent circuit
3.5kΩ
S/S
25
26
GND
Ground connection
27
RFGND
RFGND: Output current detection circuit
28 RF comparator reference ground.
VCC
RF: Output current detection.
Insert a resistor with a low resistance
between the RF pin and ground.
The maximum output current is set to
IOUT = 0.24/RF by the resistor RF.
RFGND 6kΩ
27
5kΩ RF
28
No.8321-11/30
11 Page |
Páginas | Total 30 Páginas | |
PDF Descargar | [ Datasheet LB11600JV.PDF ] |
Número de pieza | Descripción | Fabricantes |
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